Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI₂Br for Stable All-Inorganic Perovskite Solar Cells

Mixed-halide CsPbI2Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted deposition in ambient condition to obtain high-quality photoactive films extended device operation using metal cation doping dopant-free materials. Density functional theory calculations are used study structural optoelectronic properties when it doped with cations Eu2+ In3+. We experimentally incorporated In3+ ions into applied copper(I) thiocyanate (CuSCN) poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading record-high power conversion efficiencies 15.27% 15.69%, respectively, a retention >95% initial efficiency over 1600 h at 85 °C thermal stress.